data sheet semiconductor http://www.yeashin.com 1 rev.03 20140702 h P2SMSJ series fe a t ures m e c h an i c al d a t a sod-123s 0.014(0.35) 0.007(0.20) 0.112(2.85) 0.067(1.70) 0.049(1.25) .045(1.15) 0.100(2.55) 0.055(1.40) 0.152(3.85) 0.140(3.55) unit:inch(mm) ?e glas s pa ssiv a ted chi p ?e ul tra fa st sw itchi ng for hi gh e f fici ency ?e for surface mou n ted appli c ations ?e l o w forw ard v o ltage drop and high curren t cap ability ?e l o w rev e rse leakage curren t ?e plasti c ma terial h a s ul fl a mmability cla ssi fi cati on 94 v-0 high tempera t ure sol dering : 260 ?e o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 9 9 % sn abov e meet rohs env ironment sub s t a n c e dire ctiv e reque st ?e ca se : molded pl asti c ?e polari ty : indi cate d by cathode band .033(0.85) 0.033(0.85) 0.025(0.65) 0.004(0.10) surface mount transient voltage suppressor voltage 5.0 to 170 volts 200 watt peak power pulse maximum ratings and electrical characteristics rating at 25cambient temperature unless otherwise specified. resistive or inductive load, 60hz. for capacitive load derate current by 20%. ra t i n g sy m b ol va lu e uni ts peak po w e r diss ipation on 10/1000us waveform (note1.2 , fig.1) ppp 200 watts i 20 amps peak pu lse cu rre nt on 10/1 000s w a v e form(note 1 , fig.3) see table 1 amps oper ati ng and sto r age tempe r atur e range tj , tstg -55 ~ +150 c notes: 1. non- repe titiv e cu rrent pul se, per fig.3 and dera t ed abov e ta = 25 c per fig.2. 2. moun ted on 5.0 mm (0.13mm thi c k) l and area s. 3. mea s ure d on 8 . 3 m s, si ngle half sine -w a v e or equiv a lent squ a re w a v e , duty cy cle = 4 pul se s p e r minute max i mum. peak forward surge current, 8.3ms single half sine - wave superimposed on rated load for(jedec method) (notes 2,3) 2 fsm i pp quantify per reel : 3000 pcs ?e ?e
http://www.yeashin.com 2 rev.03 20140702 P2SMSJ series r e b m u n t r a p v br i @ t i r @v rwm P2SMSJ5.0a P2SMSJ6.5a P2SMSJ7.0a P2SMSJ7.5a P2SMSJ8.0a P2SMSJ8.5a P2SMSJ9.0a P2SMSJ10a P2SMSJ11a P2SMSJ12a P2SMSJ13a P2SMSJ14a P2SMSJ15a P2SMSJ16a P2SMSJ17a P2SMSJ18a P2SMSJ20a P2SMSJ22a P2SMSJ24a P2SMSJ26a P2SMSJ28a P2SMSJ30a P2SMSJ33a P2SMSJ36a P2SMSJ40a P2SMSJ43a P2SMSJ45a P2SMSJ48a P2SMSJ51a P2SMSJ54a P2SMSJ58a P2SMSJ60a P2SMSJ64a P2SMSJ70a P2SMSJ75a P2SMSJ78a P2SMSJ85a P2SMSJ90a P2SMSJ100a P2SMSJ110a P2SMSJ120a P2SMSJ130a P2SMSJ150a P2SMSJ160a P2SMSJ170a
http://www.yeashin.com 3 rev.03 20140702 P2SMSJ series device characteristics td,pulse width, micro sec t,time,ms number of cycles at 60hz t ,ambient temperature, c a o 0.1 0.1 1.0 non-repetitve pulse wavefom shown in figure.3 t=25c a o 1.0 10 10 100 100 1000 10000 p ,peak pulse forward,kw ppm i ,peak pulse current,% ppm i ,peak forward surge current, amperes fsm peak pulse forward (p ) or current (i ) derating in percentage % pp pp 1 00 75 50 25 0 125 150 175 200 25 50 75 100 0 0 1.0 2.0 3.0 4.0 0 50 100 150 10/1000 u se c wa v e f o rm as defined b ye r.e.a. e-kt td t=25c pulse width (td) is defined as the point where the peak current decayst to 50% of ipp a o tf = 10usec peak value ippm c j ,capacitance,pf 1.0 2.0 5.0 10 20 50 100 200 measured a t ze ro bi a s t j =25 c o f= 1.0mhz vsig = 5 0 m vp - p 10,000 1,000 100 10 v( ), reverse stand-off voltage, volts rwm measured a t st a n d - o f f vo l t a g e (v ) rwm 50 40 30 20 10 2 4 10 20 40 100 0 1 t= tmax 8.3ms single half sinepwave jedec m e tho d jj mounting p ad layout s fig.3 pulse wave form fig.1 peak pulse power rating curve fig.2 derating curve fig.4 typical capacitance fig.5 maximum non-repetitive peak forward surge current
|
